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| HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr IXFH12N100F IXFT12N100F VDSS = = ID25 RDS(on) trr TO-247 (IXFH) 1000V 12A 1.05 250ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt < 100A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 20 30 12 48 12 1 20 300 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C Nm/lb.in. g g Features RF capable MOSFETs Double metal process for low gate resistance Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications G = Gate S = Source G S TAB TAB TO-268 (IXFT) D = Drain TAB = Drain Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 1000 3.0 5.5 100 V V nA DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers 13.5 MHz industrial applications Pulse generation Laser drivers RF amplifiers Advantages Space savings High power density 50 A 1.5 mA 1.05 VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2003 IXYS CORPORATION, All Rights Reserved DS98856A(01/03) IXFH12N100F IXFT12N100F Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS (TO-247) 0.21 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 8 12 2700 305 93 12 9.8 31 12 77 16 42 S pF pF pF ns ns ns ns nC nC nC 0.42 C/W C/W Dim. e P TO-247 (IXFH) Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 12A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 12 48 1.5 A A V Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 250 ns 0.8 7.0 C A TO-268 Outline Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min Recommended Footprint IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 |
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